[PR] SK hynix Begins Mass Production of High-Speed HBM2E DRAM

[Tsing]

Image: SK hynix



SK hynix Inc. (or ‘the Company,’ www.skhynix.com) announced that it has started the full-scale mass-production of high-speed DRAM, ‘HBM2E’, only ten months after the Company announced the development of the new product in August last year.



SK hynix’s HBM2E supports over 460GB (Gigabyte) per second with 1,024 I/Os (Inputs/Outputs) based on the 3.6Gbps (gigabits-per-second) speed performance per pin. It is the fastest DRAM solution in the industry, being able to transmit 124 FHD (full-HD) movies (3.7GB each) per second. The density is 16GB by vertically stacking eight 16Gb chips through TSV (Through Silicon Via) technology, and it is more than doubled from the previous generation (HBM2).



HBM2E boasts high-speed, high-capacity, and low-power characteristics; it is an optimal memory solution for the next-generation AI...

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[Grimlakin]

That is interesting. I wonder at the materials needed. If they are able to move away from rare earth materials to something less expensive and more abundant or easily created.