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Image: Samsung
Samsung has worked with Intel to develop the industry’s first 512 GB DDR5 memory modules using High-K Metal Gate (HKMG) process technology. Carolyn Duran, Vice President and GM of Memory and IO Technology at Intel, said her engineering teams have partnered closely with Samsung to deliver the power-efficient memory. It has been optimized for Intel’s forthcoming Xeon Scalable processors, Sapphire Rapids.
“Samsung is the only semiconductor company with logic and memory capabilities and the expertise to incorporate HKMG cutting-edge logic technology into memory product development,” said Young-Soo Sohn, Vice President of the DRAM Memory Planning/Enabling Group at Samsung Electronics. “By bringing this type...
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