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Neo Semiconductor has announced the launch of 3D X-DRAM, a "ground-breaking" and "game-changing" technology that represents the world’s first 3D NAND-like DRAM cell array, targeted to solve DRAM’s capacity bottleneck and replace the entire 2D DRAM market. According to a chart on the official website, 3D X-DRAM currently boasts 128 GB of estimated capacity via 230 layers, but that number is set to grow significantly in the years ahead, with 1 TB ICs hinted by 2035. What all of this seems to mean is that there will come a time when people can brag about having terabytes of RAM in their desktop PCs.
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